SI2342DS-T1-GE3 Pricing (USD) [471021pcs Stock]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Part Number:
- SI2342DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 8V 6A SOT-23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI2342DS-T1-GE3 electronic components. SI2342DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2342DS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2342DS-T1-GE3 Product Attributes
Part Number :
SI2342DS-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 8V 6A SOT-23
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
17 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.8nC @ 4.5V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
1070pF @ 4V
FET Feature :
-
Power Dissipation (Max) :
1.3W (Ta), 2.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23
Package / Case :
TO-236-3, SC-59, SOT-23-3
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