ON Semiconductor - NVHL082N65S3F

KEY Part #: K6416773

NVHL082N65S3F Pricing (USD) [18704pcs Stock]

  • 1 pcs$2.20341

Part Number:
NVHL082N65S3F
Manufacturer:
ON Semiconductor
Detailed description:
SUPERFET3 650V FRFET82MO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Diodes - Zener - Single, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NVHL082N65S3F electronic components. NVHL082N65S3F can be shipped within 24 hours after order. If you have any demands for NVHL082N65S3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVHL082N65S3F Product Attributes

Part Number : NVHL082N65S3F
Manufacturer : ON Semiconductor
Description : SUPERFET3 650V FRFET82MO
Series : Automotive, AEC-Q101, SuperFET® III, FRFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 82 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3410pF @ 400V
FET Feature : -
Power Dissipation (Max) : 313W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3 Variant

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