NVHL082N65S3F Pricing (USD) [18704pcs Stock]
- 1 pcs$2.20341
- Part Number:
- NVHL082N65S3F
- Manufacturer:
- ON Semiconductor
- Detailed description:
- SUPERFET3 650V FRFET82MO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVHL082N65S3F electronic components. NVHL082N65S3F can be shipped within 24 hours after order. If you have any demands for NVHL082N65S3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVHL082N65S3F Product Attributes
Part Number :
NVHL082N65S3F
Manufacturer :
ON Semiconductor
Description :
SUPERFET3 650V FRFET82MO
Series :
Automotive, AEC-Q101, SuperFET® III, FRFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
82 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3410pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
313W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3 Variant
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