Toshiba Semiconductor and Storage - HN1B04FE-GR,LF

KEY Part #: K6391919

HN1B04FE-GR,LF Pricing (USD) [1760237pcs Stock]

  • 1 pcs$0.02112
  • 4,000 pcs$0.02101
  • 8,000 pcs$0.01827
  • 12,000 pcs$0.01553
  • 28,000 pcs$0.01462
  • 100,000 pcs$0.01218

Part Number:
HN1B04FE-GR,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS NPN/PNP 50V 0.15A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN1B04FE-GR,LF electronic components. HN1B04FE-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1B04FE-GR,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1B04FE-GR,LF Product Attributes

Part Number : HN1B04FE-GR,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS NPN/PNP 50V 0.15A ES6
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 100mW
Frequency - Transition : 80MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6

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