Toshiba Semiconductor and Storage - HN1B01F-GR(TE85L,F

KEY Part #: K6392102

[6290pcs Stock]


    Part Number:
    HN1B01F-GR(TE85L,F
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS NPN/PNP 50V 0.15A SM6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage HN1B01F-GR(TE85L,F electronic components. HN1B01F-GR(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN1B01F-GR(TE85L,F, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN1B01F-GR(TE85L,F Product Attributes

    Part Number : HN1B01F-GR(TE85L,F
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS NPN/PNP 50V 0.15A SM6
    Series : -
    Part Status : Discontinued at Digi-Key
    Transistor Type : NPN, PNP
    Current - Collector (Ic) (Max) : 150mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
    Power - Max : 300mW
    Frequency - Transition : 120MHz
    Operating Temperature : 125°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SC-74, SOT-457
    Supplier Device Package : SM6

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