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  5. FQA38N30

ON Semiconductor - FQA38N30

KEY Part #: K6415172

[27604pcs Stock]

    Part Number:
    FQA38N30
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 300V 38.4A TO-3P.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQA38N30 electronic components. FQA38N30 can be shipped within 24 hours after order. If you have any demands for FQA38N30, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQA38N30 Product Attributes

    Part Number : FQA38N30
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 300V 38.4A TO-3P
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 300V
    Current - Continuous Drain (Id) @ 25°C : 38.4A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 85 mOhm @ 19.2A, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 4400pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 290W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-3P
    Package / Case : TO-3P-3, SC-65-3

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