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  5. NDS355AN_G

ON Semiconductor - NDS355AN_G

KEY Part #: K6401138

[8835pcs Stock]

    Part Number:
    NDS355AN_G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 30V 1.7A SSOT3.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single and Thyristors - TRIACs ...
    Competitive Advantage:
    We specialize in ON Semiconductor NDS355AN_G electronic components. NDS355AN_G can be shipped within 24 hours after order. If you have any demands for NDS355AN_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NDS355AN_G Product Attributes

    Part Number : NDS355AN_G
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 30V 1.7A SSOT3
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 85 mOhm @ 1.9A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 5nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 195pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 500mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SuperSOT-3
    Package / Case : TO-236-3, SC-59, SOT-23-3

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