Diodes Incorporated - DMN31D5L-13

KEY Part #: K6394807

DMN31D5L-13 Pricing (USD) [1704728pcs Stock]

  • 1 pcs$0.02170

Part Number:
DMN31D5L-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 25V-30V SOT23 TR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN31D5L-13 electronic components. DMN31D5L-13 can be shipped within 24 hours after order. If you have any demands for DMN31D5L-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN31D5L-13 Product Attributes

Part Number : DMN31D5L-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 25V-30V SOT23 TR
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 15V
FET Feature : -
Power Dissipation (Max) : 350mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3