IRL2910PBF Pricing (USD) [35558pcs Stock]
- 1 pcs$0.99926
- 10 pcs$0.90101
- 100 pcs$0.72394
- 500 pcs$0.56307
- 1,000 pcs$0.46654
- Part Number:
- IRL2910PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 55A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRL2910PBF electronic components. IRL2910PBF can be shipped within 24 hours after order. If you have any demands for IRL2910PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL2910PBF Product Attributes
Part Number :
IRL2910PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 55A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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