DMN21D2UFB-7B Pricing (USD) [1089357pcs Stock]
- 1 pcs$0.03395
- 10,000 pcs$0.03049
- Part Number:
- DMN21D2UFB-7B
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V 0.76A 3DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - FETs, MOSFETs - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN21D2UFB-7B electronic components. DMN21D2UFB-7B can be shipped within 24 hours after order. If you have any demands for DMN21D2UFB-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN21D2UFB-7B Product Attributes
Part Number :
DMN21D2UFB-7B
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V 0.76A 3DFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
990 mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.93nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
27.6pF @ 16V
FET Feature :
-
Power Dissipation (Max) :
380mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-DFN1006 (1.0x0.6)
Package / Case :
3-UFDFN
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