DMN3009SFGQ-13 Pricing (USD) [191069pcs Stock]
- 1 pcs$0.19358
- Part Number:
- DMN3009SFGQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFETN-CH 30VPOWERDI3333-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN3009SFGQ-13 electronic components. DMN3009SFGQ-13 can be shipped within 24 hours after order. If you have any demands for DMN3009SFGQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3009SFGQ-13 Product Attributes
Part Number :
DMN3009SFGQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFETN-CH 30VPOWERDI3333-8
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
900mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerVDFN
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