PHB29N08T,118 Pricing (USD) [274771pcs Stock]
- 1 pcs$0.13529
- 4,800 pcs$0.13461
- Part Number:
- PHB29N08T,118
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 75V 27A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PHB29N08T,118 electronic components. PHB29N08T,118 can be shipped within 24 hours after order. If you have any demands for PHB29N08T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB29N08T,118 Product Attributes
Part Number :
PHB29N08T,118
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 75V 27A D2PAK
Series :
TrenchMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
11V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 14A, 11V
Vgs(th) (Max) @ Id :
5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
810pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
88W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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