IXYS - IXFH66N20Q

KEY Part #: K6408877

IXFH66N20Q Pricing (USD) [475pcs Stock]

  • 30 pcs$4.04474

Part Number:
IXFH66N20Q
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 200V 66A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Rectifiers - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in IXYS IXFH66N20Q electronic components. IXFH66N20Q can be shipped within 24 hours after order. If you have any demands for IXFH66N20Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH66N20Q Product Attributes

Part Number : IXFH66N20Q
Manufacturer : IXYS
Description : MOSFET N-CH 200V 66A TO-247
Series : HiPerFET™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id : 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 105nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 400W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-247-3