IXT-1-1N100S1 Pricing (USD) [8510pcs Stock]
- 1 pcs$5.59712
- 94 pcs$5.56928
- Part Number:
- IXT-1-1N100S1
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 1.5A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXT-1-1N100S1 electronic components. IXT-1-1N100S1 can be shipped within 24 hours after order. If you have any demands for IXT-1-1N100S1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXT-1-1N100S1 Product Attributes
Part Number :
IXT-1-1N100S1
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 1.5A 8-SOIC
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
-
Supplier Device Package :
-
Package / Case :
-
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