IXTP1R6N50D2 Pricing (USD) [40837pcs Stock]
- 1 pcs$1.05361
- 10 pcs$0.95285
- 100 pcs$0.76575
- 500 pcs$0.59558
- 1,000 pcs$0.49348
- Part Number:
- IXTP1R6N50D2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 500V 1.6A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - Bipolar (BJT) - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXTP1R6N50D2 electronic components. IXTP1R6N50D2 can be shipped within 24 hours after order. If you have any demands for IXTP1R6N50D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP1R6N50D2 Product Attributes
Part Number :
IXTP1R6N50D2
Manufacturer :
IXYS
Description :
MOSFET N-CH 500V 1.6A TO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
2.3 Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
23.7nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
645pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
100W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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