SIZF916DT-T1-GE3 Pricing (USD) [120687pcs Stock]
- 1 pcs$0.30647
- Part Number:
- SIZF916DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Thyristors - TRIACs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZF916DT-T1-GE3 electronic components. SIZF916DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF916DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF916DT-T1-GE3 Product Attributes
Part Number :
SIZF916DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH DUAL 30V
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs :
4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V, 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 15V, 4320pF @ 15V
Power - Max :
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (6x5)
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