C3M0075120J-TR Pricing (USD) [7030pcs Stock]
- 1 pcs$5.86131
- Part Number:
- C3M0075120J-TR
- Manufacturer:
- Cree/Wolfspeed
- Detailed description:
- 1200V 75 MOHM G3 SIC MOSFET ON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Cree/Wolfspeed C3M0075120J-TR electronic components. C3M0075120J-TR can be shipped within 24 hours after order. If you have any demands for C3M0075120J-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C3M0075120J-TR Product Attributes
Part Number :
C3M0075120J-TR
Manufacturer :
Cree/Wolfspeed
Description :
1200V 75 MOHM G3 SIC MOSFET ON
Series :
C3M™
Part Status :
Active
FET Type :
N-Channel
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
15V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id :
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 15V
Vgs (Max) :
+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 1000V
FET Feature :
-
Power Dissipation (Max) :
113.6W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263-7
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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