STL3NM60N Pricing (USD) [98401pcs Stock]
- 1 pcs$0.39935
- 3,000 pcs$0.39736
- Part Number:
- STL3NM60N
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 0.65A POWERFLAT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in STMicroelectronics STL3NM60N electronic components. STL3NM60N can be shipped within 24 hours after order. If you have any demands for STL3NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL3NM60N Product Attributes
Part Number :
STL3NM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 0.65A POWERFLAT
Series :
MDmesh™ II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
650mA (Ta), 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.5nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
188pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta), 22W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerFlat™ (3.3x3.3)
Package / Case :
8-PowerVDFN
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