PHT6NQ10T,135 Pricing (USD) [281605pcs Stock]
- 1 pcs$0.17708
- 4,000 pcs$0.17620
- Part Number:
- PHT6NQ10T,135
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 100V 3A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PHT6NQ10T,135 electronic components. PHT6NQ10T,135 can be shipped within 24 hours after order. If you have any demands for PHT6NQ10T,135, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHT6NQ10T,135 Product Attributes
Part Number :
PHT6NQ10T,135
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 100V 3A SOT223
Series :
TrenchMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
633pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.8W (Ta), 8.3W (Tc)
Operating Temperature :
-65°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-73
Package / Case :
TO-261-4, TO-261AA
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