IRF6727MTRPBF Pricing (USD) [99089pcs Stock]
- 1 pcs$0.62121
- 4,800 pcs$0.61812
- Part Number:
- IRF6727MTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 32A DIRECTFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6727MTRPBF electronic components. IRF6727MTRPBF can be shipped within 24 hours after order. If you have any demands for IRF6727MTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6727MTRPBF Product Attributes
Part Number :
IRF6727MTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 32A DIRECTFET
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6190pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 89W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DIRECTFET™ MX
Package / Case :
DirectFET™ Isometric MX
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