Infineon Technologies - BSS123NH6327XTSA1

KEY Part #: K6418973

BSS123NH6327XTSA1 Pricing (USD) [1157728pcs Stock]

  • 1 pcs$0.03195
  • 3,000 pcs$0.02211

Part Number:
BSS123NH6327XTSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 0.19A SOT-23.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Infineon Technologies BSS123NH6327XTSA1 electronic components. BSS123NH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS123NH6327XTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS123NH6327XTSA1 Product Attributes

Part Number : BSS123NH6327XTSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 0.19A SOT-23
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6 Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id : 1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 20.9pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3

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