Rohm Semiconductor - ES6U42T2R

KEY Part #: K6421318

ES6U42T2R Pricing (USD) [445106pcs Stock]

  • 1 pcs$0.08351
  • 8,000 pcs$0.08310

Part Number:
ES6U42T2R
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET P-CH 20V 1A WEMT6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Special Purpose, Power Driver Modules, Transistors - JFETs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Rohm Semiconductor ES6U42T2R electronic components. ES6U42T2R can be shipped within 24 hours after order. If you have any demands for ES6U42T2R, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES6U42T2R Product Attributes

Part Number : ES6U42T2R
Manufacturer : Rohm Semiconductor
Description : MOSFET P-CH 20V 1A WEMT6
Series : -
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 2.1nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 10V
FET Feature : Schottky Diode (Body)
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-WEMT
Package / Case : SOT-563, SOT-666

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