Vishay Siliconix - SIE822DF-T1-GE3

KEY Part #: K6418504

SIE822DF-T1-GE3 Pricing (USD) [66291pcs Stock]

  • 1 pcs$0.59278
  • 3,000 pcs$0.58983

Part Number:
SIE822DF-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 20V 50A POLARPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - RF, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Programmable Unijunction, Thyristors - TRIACs and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Siliconix SIE822DF-T1-GE3 electronic components. SIE822DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE822DF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIE822DF-T1-GE3 Product Attributes

Part Number : SIE822DF-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 20V 50A POLARPAK
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.4 mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 10V
FET Feature : -
Power Dissipation (Max) : 5.2W (Ta), 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 10-PolarPAK® (S)
Package / Case : 10-PolarPAK® (S)

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