IXYS - IXTR102N65X2

KEY Part #: K6395720

IXTR102N65X2 Pricing (USD) [7433pcs Stock]

  • 1 pcs$7.25392
  • 10 pcs$6.59287
  • 100 pcs$5.60394

Part Number:
IXTR102N65X2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 650V 54A ISOPLUS247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in IXYS IXTR102N65X2 electronic components. IXTR102N65X2 can be shipped within 24 hours after order. If you have any demands for IXTR102N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTR102N65X2 Product Attributes

Part Number : IXTR102N65X2
Manufacturer : IXYS
Description : MOSFET N-CH 650V 54A ISOPLUS247
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 33 mOhm @ 51A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 152nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 10900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 330W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ISOPLUS247™
Package / Case : ISOPLUS247™