IPU50R950CEAKMA2 Pricing (USD) [387074pcs Stock]
- 1 pcs$0.09556
- 1,500 pcs$0.08771
- Part Number:
- IPU50R950CEAKMA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 500V 4.3A TO251.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPU50R950CEAKMA2 electronic components. IPU50R950CEAKMA2 can be shipped within 24 hours after order. If you have any demands for IPU50R950CEAKMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU50R950CEAKMA2 Product Attributes
Part Number :
IPU50R950CEAKMA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 500V 4.3A TO251
Series :
CoolMOS™ CE
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id :
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
10.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
231pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
53W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO251-3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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