Diodes Incorporated - DMTH6009LPSQ-13

KEY Part #: K6396413

DMTH6009LPSQ-13 Pricing (USD) [212693pcs Stock]

  • 1 pcs$0.17390

Part Number:
DMTH6009LPSQ-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 41V-60V POWERDI506.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - RF, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH6009LPSQ-13 electronic components. DMTH6009LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6009LPSQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6009LPSQ-13 Product Attributes

Part Number : DMTH6009LPSQ-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 41V-60V POWERDI506
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 33.5nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 1925pF @ 30V
FET Feature : -
Power Dissipation (Max) : 2.8W (Ta), 136W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI5060-8
Package / Case : 8-PowerTDFN