DMTH6009LPSQ-13 Pricing (USD) [212693pcs Stock]
- 1 pcs$0.17390
- Part Number:
- DMTH6009LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 41V-60V POWERDI506.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH6009LPSQ-13 electronic components. DMTH6009LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6009LPSQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6009LPSQ-13 Product Attributes
Part Number :
DMTH6009LPSQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 41V-60V POWERDI506
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1925pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 136W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI5060-8
Package / Case :
8-PowerTDFN
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