Description :
MOSFET 2N-CH 600V 12A I4-PAC
Series :
HiPerFET™, PolarHT™
FET Type :
2 N-Channel (Dual)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
12A
Rds On (Max) @ Id, Vgs :
350 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
i4-Pac™-5
Supplier Device Package :
ISOPLUS i4-PAC™