IPC218N06N3X1SA2 Pricing (USD) [36029pcs Stock]
- 1 pcs$2.02281
- Part Number:
- IPC218N06N3X1SA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 3A SAWN ON FOIL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPC218N06N3X1SA2 electronic components. IPC218N06N3X1SA2 can be shipped within 24 hours after order. If you have any demands for IPC218N06N3X1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC218N06N3X1SA2 Product Attributes
Part Number :
IPC218N06N3X1SA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 3A SAWN ON FOIL
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
3A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
Sawn on foil
Package / Case :
Die
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