EGF1AHE3_A/H Pricing (USD) [460696pcs Stock]
- 1 pcs$0.08029
- Part Number:
- EGF1AHE3_A/H
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 50V 1A DO214BA. Rectifiers 1A,50V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Special Purpose, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division EGF1AHE3_A/H electronic components. EGF1AHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1AHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1AHE3_A/H Product Attributes
Part Number :
EGF1AHE3_A/H
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 50V 1A DO214BA
Series :
Automotive, AEC-Q101, Superectifier®
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
50V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
5µA @ 50V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214BA
Supplier Device Package :
DO-214BA (GF1)
Operating Temperature - Junction :
-65°C ~ 175°C
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