Vishay Siliconix - IRFD220PBF

KEY Part #: K6399944

IRFD220PBF Pricing (USD) [76032pcs Stock]

  • 1 pcs$0.45991
  • 10 pcs$0.40932
  • 100 pcs$0.30592
  • 500 pcs$0.23724
  • 1,000 pcs$0.18729

Part Number:
IRFD220PBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 200V 800MA 4-DIP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFD220PBF electronic components. IRFD220PBF can be shipped within 24 hours after order. If you have any demands for IRFD220PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFD220PBF Product Attributes

Part Number : IRFD220PBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 200V 800MA 4-DIP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 800 mOhm @ 480mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 260pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : 4-DIP, Hexdip, HVMDIP
Package / Case : 4-DIP (0.300", 7.62mm)