Vishay Semiconductor Diodes Division - BYM12-200HE3_A/H

KEY Part #: K6439410

BYM12-200HE3_A/H Pricing (USD) [726943pcs Stock]

  • 1 pcs$0.05088

Part Number:
BYM12-200HE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 1A,200V,50NS GL41 AEC-Q101 Qualified
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYM12-200HE3_A/H electronic components. BYM12-200HE3_A/H can be shipped within 24 hours after order. If you have any demands for BYM12-200HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM12-200HE3_A/H Product Attributes

Part Number : BYM12-200HE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 1A DO213AB
Series : Automotive, AEC-Q101, Superectifier®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AB, MELF (Glass)
Supplier Device Package : DO-213AB
Operating Temperature - Junction : -65°C ~ 175°C

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