Vishay Semiconductor Diodes Division - BAL99-HE3-18

KEY Part #: K6458613

BAL99-HE3-18 Pricing (USD) [3181000pcs Stock]

  • 1 pcs$0.01227
  • 10,000 pcs$0.01221

Part Number:
BAL99-HE3-18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 70V 250MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 450mA 6ns 250 mA IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Power Driver Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAL99-HE3-18 electronic components. BAL99-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAL99-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAL99-HE3-18 Product Attributes

Part Number : BAL99-HE3-18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 70V 250MA SOT23
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 70V
Current - Average Rectified (Io) : 250mA
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 6ns
Current - Reverse Leakage @ Vr : 2.5µA @ 70V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23
Operating Temperature - Junction : -55°C ~ 150°C

You May Also Be Interested In
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode