BSS126H6327XTSA2 Pricing (USD) [540554pcs Stock]
- 1 pcs$0.06843
- 3,000 pcs$0.05312
- Part Number:
- BSS126H6327XTSA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 0.021A SOT-23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSS126H6327XTSA2 electronic components. BSS126H6327XTSA2 can be shipped within 24 hours after order. If you have any demands for BSS126H6327XTSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS126H6327XTSA2 Product Attributes
Part Number :
BSS126H6327XTSA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 0.021A SOT-23
Series :
SIPMOS®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
0V, 10V
Rds On (Max) @ Id, Vgs :
500 Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id :
1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs :
2.1nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
28pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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