[13873pcs Stock]
- Part Number:
- TPCF8A01(TE85L)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 20V 3A VS-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Diodes - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPCF8A01(TE85L) electronic components. TPCF8A01(TE85L) can be shipped within 24 hours after order. If you have any demands for TPCF8A01(TE85L), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCF8A01(TE85L) Product Attributes
Part Number :
TPCF8A01(TE85L)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 20V 3A VS-8
Series :
U-MOSIII
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2V, 4.5V
Rds On (Max) @ Id, Vgs :
49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
330mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
VS-8 (2.9x1.5)
Package / Case :
8-SMD, Flat Lead
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