IRFB7446GPBF Pricing (USD) [51668pcs Stock]
- 1 pcs$0.72749
- 10 pcs$0.65684
- 100 pcs$0.52777
- 500 pcs$0.41047
- 1,000 pcs$0.32172
- Part Number:
- IRFB7446GPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N CH 40V 120A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB7446GPBF electronic components. IRFB7446GPBF can be shipped within 24 hours after order. If you have any demands for IRFB7446GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB7446GPBF Product Attributes
Part Number :
IRFB7446GPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 40V 120A TO220AB
Series :
HEXFET®, StrongIRFET™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
3.3 mOhm @ 70A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3183pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
99W (Tc)
Operating Temperature :
-
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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