Nexperia USA Inc. - PSMN130-200D,118

KEY Part #: K6415763

PSMN130-200D,118 Pricing (USD) [173508pcs Stock]

  • 1 pcs$0.30165
  • 2,500 pcs$0.30015

Part Number:
PSMN130-200D,118
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 200V 20A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN130-200D,118 electronic components. PSMN130-200D,118 can be shipped within 24 hours after order. If you have any demands for PSMN130-200D,118, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN130-200D,118 Product Attributes

Part Number : PSMN130-200D,118
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 200V 20A DPAK
Series : TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2470pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63