IXYS - IXFQ26N50P3

KEY Part #: K6394870

IXFQ26N50P3 Pricing (USD) [21314pcs Stock]

  • 1 pcs$2.13760
  • 30 pcs$2.12696

Part Number:
IXFQ26N50P3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 500V 26A TO-3P.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in IXYS IXFQ26N50P3 electronic components. IXFQ26N50P3 can be shipped within 24 hours after order. If you have any demands for IXFQ26N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFQ26N50P3 Product Attributes

Part Number : IXFQ26N50P3
Manufacturer : IXYS
Description : MOSFET N-CH 500V 26A TO-3P
Series : HiPerFET™, Polar3™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 230 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2220pF @ 25V
FET Feature : -
Power Dissipation (Max) : 500W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3