[1451pcs Stock]
- Part Number:
- SI5858DU-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 20V 6A PPAK CHIPFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - JFETs, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI5858DU-T1-GE3 electronic components. SI5858DU-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5858DU-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5858DU-T1-GE3 Product Attributes
Part Number :
SI5858DU-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V 6A PPAK CHIPFET
Series :
LITTLE FOOT®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 8V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
520pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
2.3W (Ta), 8.3W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® ChipFet Dual
Package / Case :
PowerPAK® ChipFET™ Dual
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