Vishay Semiconductor Diodes Division - BYG21M-E3/TR3

KEY Part #: K6456009

BYG21M-E3/TR3 Pricing (USD) [770357pcs Stock]

  • 1 pcs$0.04801
  • 7,500 pcs$0.04390
  • 15,000 pcs$0.04106
  • 37,500 pcs$0.03776

Part Number:
BYG21M-E3/TR3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5 Amp 1000 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG21M-E3/TR3 electronic components. BYG21M-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG21M-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG21M-E3/TR3 Product Attributes

Part Number : BYG21M-E3/TR3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1KV 1.5A
Series : -
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ If : 1.6V @ 1.5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 120ns
Current - Reverse Leakage @ Vr : 1µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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