DMG6602SVT-7 Pricing (USD) [885618pcs Stock]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Part Number:
- DMG6602SVT-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N/P-CH 30V TSOT23-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG6602SVT-7 electronic components. DMG6602SVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVT-7 Product Attributes
Part Number :
DMG6602SVT-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET N/P-CH 30V TSOT23-6
Series :
-
Part Status :
Not For New Designs
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.4A, 2.8A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Power - Max :
840mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
TSOT-23-6
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