FDD850N10LD Pricing (USD) [180202pcs Stock]
- 1 pcs$0.20526
- 2,500 pcs$0.18028
- Part Number:
- FDD850N10LD
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 15.3A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF and Diodes - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD850N10LD electronic components. FDD850N10LD can be shipped within 24 hours after order. If you have any demands for FDD850N10LD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD850N10LD Product Attributes
Part Number :
FDD850N10LD
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 15.3A DPAK
Series :
PowerTrench®
Part Status :
Last Time Buy
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1465pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
42W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252-4L
Package / Case :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
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