[164pcs Stock]
- Part Number:
- IPSH6N03LB G
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 50A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPSH6N03LB G electronic components. IPSH6N03LB G can be shipped within 24 hours after order. If you have any demands for IPSH6N03LB G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPSH6N03LB G Product Attributes
Part Number :
IPSH6N03LB G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 50A IPAK
Series :
OptiMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
83W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO251-3
Package / Case :
TO-251-3 Stub Leads, IPak
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