NVATS5A106PLZT4G Pricing (USD) [209191pcs Stock]
- 1 pcs$0.17770
- 3,000 pcs$0.17681
- Part Number:
- NVATS5A106PLZT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CHANNEL 40V 33A ATPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - Special Purpose, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVATS5A106PLZT4G electronic components. NVATS5A106PLZT4G can be shipped within 24 hours after order. If you have any demands for NVATS5A106PLZT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVATS5A106PLZT4G Product Attributes
Part Number :
NVATS5A106PLZT4G
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CHANNEL 40V 33A ATPAK
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1380pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
48W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
ATPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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