Toshiba Semiconductor and Storage - SSM5N15FE(TE85L,F)

KEY Part #: K6407522

SSM5N15FE(TE85L,F) Pricing (USD) [1169017pcs Stock]

  • 1 pcs$0.03410
  • 4,000 pcs$0.03393

Part Number:
SSM5N15FE(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 30V 100MA ESV.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose and Transistors - JFETs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM5N15FE(TE85L,F) electronic components. SSM5N15FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM5N15FE(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM5N15FE(TE85L,F) Product Attributes

Part Number : SSM5N15FE(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 30V 100MA ESV
Series : π-MOSVI
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7.8pF @ 3V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : ESV
Package / Case : SOT-553

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