Infineon Technologies - BSB104N08NP3GXUSA1

KEY Part #: K6419886

BSB104N08NP3GXUSA1 Pricing (USD) [142021pcs Stock]

  • 1 pcs$0.26044
  • 5,000 pcs$0.23897

Part Number:
BSB104N08NP3GXUSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 80V 13A 2WDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
We specialize in Infineon Technologies BSB104N08NP3GXUSA1 electronic components. BSB104N08NP3GXUSA1 can be shipped within 24 hours after order. If you have any demands for BSB104N08NP3GXUSA1, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSB104N08NP3GXUSA1 Product Attributes

Part Number : BSB104N08NP3GXUSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 80V 13A 2WDSON
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 10.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2100pF @ 40V
FET Feature : -
Power Dissipation (Max) : 2.8W (Ta), 42W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : MG-WDSON-2, CanPAK M™
Package / Case : 3-WDSON