IRF3709PBF Pricing (USD) [55666pcs Stock]
- 1 pcs$0.67732
- 10 pcs$0.59872
- 100 pcs$0.47325
- 500 pcs$0.34717
- 1,000 pcs$0.27408
- Part Number:
- IRF3709PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 90A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF3709PBF electronic components. IRF3709PBF can be shipped within 24 hours after order. If you have any demands for IRF3709PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3709PBF Product Attributes
Part Number :
IRF3709PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 90A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2672pF @ 16V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 120W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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