Vishay Siliconix - SIHF12N65E-GE3

KEY Part #: K6399389

SIHF12N65E-GE3 Pricing (USD) [32358pcs Stock]

  • 1 pcs$1.27362
  • 1,000 pcs$0.55017

Part Number:
SIHF12N65E-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 650V 12A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF12N65E-GE3 Product Attributes

Part Number : SIHF12N65E-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 650V 12A TO-220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1224pF @ 100V
FET Feature : -
Power Dissipation (Max) : 33W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220 Full Pack
Package / Case : TO-220-3 Full Pack