Infineon Technologies - BSL373SNH6327XTSA1

KEY Part #: K6421015

BSL373SNH6327XTSA1 Pricing (USD) [326107pcs Stock]

  • 1 pcs$0.11342
  • 3,000 pcs$0.10888

Part Number:
BSL373SNH6327XTSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 2A 6TSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Diodes - RF ...
Competitive Advantage:
We specialize in Infineon Technologies BSL373SNH6327XTSA1 electronic components. BSL373SNH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSL373SNH6327XTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSL373SNH6327XTSA1 Product Attributes

Part Number : BSL373SNH6327XTSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 2A 6TSOP
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 230 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 218µA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 265pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TSOP-6-6
Package / Case : SOT-23-6 Thin, TSOT-23-6