BUZ30AH3045AATMA1 Pricing (USD) [82979pcs Stock]
- 1 pcs$0.47121
- 1,000 pcs$0.43233
- Part Number:
- BUZ30AH3045AATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 21A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies BUZ30AH3045AATMA1 electronic components. BUZ30AH3045AATMA1 can be shipped within 24 hours after order. If you have any demands for BUZ30AH3045AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUZ30AH3045AATMA1 Product Attributes
Part Number :
BUZ30AH3045AATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 21A TO-263
Series :
SIPMOS®
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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