STFU6N65 Pricing (USD) [51384pcs Stock]
- 1 pcs$0.71913
- 10 pcs$0.65015
- 100 pcs$0.52258
- 500 pcs$0.40644
- 1,000 pcs$0.31857
- Part Number:
- STFU6N65
- Manufacturer:
- STMicroelectronics
- Detailed description:
- N-CHANNEL 650 V 1.2 OHM TYP. 4.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STFU6N65 electronic components. STFU6N65 can be shipped within 24 hours after order. If you have any demands for STFU6N65, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STFU6N65 Product Attributes
Part Number :
STFU6N65
Manufacturer :
STMicroelectronics
Description :
N-CHANNEL 650 V 1.2 OHM TYP. 4
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.7 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
463pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
620mW (Ta), 77W (Tc)
Operating Temperature :
-55°C ~ 150°C (TA)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220FP
Package / Case :
TO-220-3 Full Pack
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