DMJ70H900HJ3 Pricing (USD) [64604pcs Stock]
- 1 pcs$0.60827
- 75 pcs$0.60524
- Part Number:
- DMJ70H900HJ3
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 651V 800V TO251.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMJ70H900HJ3 electronic components. DMJ70H900HJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H900HJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H900HJ3 Product Attributes
Part Number :
DMJ70H900HJ3
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 651V 800V TO251
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
700V
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18.4nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
603pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
68W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-251
Package / Case :
TO-251-3, IPak, Short Leads
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